Advances in GaAs and GaSb optoelectronics for heterogeneous integration with silicon-photonics – Presented by Mircea Guina, Tampere University of Technology, at the Photonic Integration Conference 2018, which will take place on October 2, at High Tech Campus Eindhoven, The Netherlands.
The development of photonic integrated circuits, which refers broadly to a technology platform that allows the combination of different optical components, has recently progressed as a fast pace pushed by vigorous advances of Si-based circuit technology. However, major advances are still needed to enable more practical and scalable manufacturing approaches for integration of III-V light sources and other optoelectronics components on Si. This trend is accelerated by transition of Si-photonics technology to application outside telecomm and datacomm area, for example towards mid-IR wavelength range to serve needs in sensing and life-science applications.
With this perspective, the latest advances in developing GaAs- and GaSb-based light sources for heterogenouse integration with Si photonics circuits are reviewed. In terms of integration platform we address hybrid and novel monolithic approaches. Specific applications discussed include un-cooled operation of transceivers at 1.2 -1.3 µm window and integrated programmable light sources for sensing at 2-3 µm window. Continue reading “Advances in GaAs and GaSb optoelectronics for heterogeneous integration with silicon-photonics – Presented by Mircea Guina, Tampere University of Technology”