World-leading nanoelectronics research center Imec presents at OFC 2016, the international event for both the science and business of optical communications held March 20-24, performance improvements of various key building blocks of its wafer-scale integrated silicon photonics platform (iSiPP). The new results expand imec’s iSiPP device portfolio to support 50Gb/s non-return-to-zero (NRZ) lane rates, and are an important milestone for the realization of high data rate silicon integrated optical interconnects targeting high density, high bandwidth, low power telecom and datacom transceivers, as well as for low cost large volume applications such as sensors or LiDAR.
Through process and design optimizations, imec has improved the operating speed of the silicon based traveling-wave mach-zehnder modulators and ring modulators to reach 50Gb/s NRZ lane rates. In addition, a C-band GeSi electro-absorption modulator was developed with electro-optical bandwidth beyond 50GHz, enabling NRZ modulation at 56Gb/s and beyond. All modulator types can be driven with competitive drive voltages of 2Vpp or below, enabling compatibility with power efficient CMOS driver circuits.
The responsivity of the high-speed Ge photodetectors has been improved to 1A/W, enabling highly sensitive 50Gb/s NRZ receivers both in the C-band and the O-band. Also, edge coupling structures were developed for broadband optical coupling to high-NA and lensed fiber with less than 3dB insertion loss in the C-band. Moreover, designers can exploit the superior patterning fidelity provided by 193-nm lithography, enabling robust active and passive waveguide devices. Read more